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PDF IRGBC30MD2-S Data sheet ( Hoja de datos )
| Número de pieza | IRGBC30MD2-S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 9.1143
IRGBC30MD2-S
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
Fast CoPack IGBT
Features
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
VCES = 600V
VCE(sat) ≤ 2.9V
@VGE = 15V, IC = 16A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
SMD-220
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
26
16
52
52
12
52
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
Min.
Typ.
RθJC
RθJC
RθJA
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, (PCB Mount)**
Junction-to-Ambient, typical socket mount
Weight
——
——
——
——
— 2 (0.07)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
1.2
2.5
40
80
—
Units
°C/W
g (oz)
C-373
Revision 2
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IRGBC30MD2-S
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200
Cres = C gc
Coes = Cce + C gc
1000
800
Cies
Coes
600
400
200 Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
3.80
VCC = 480V
3.76 VGE = 15V
TC = 25°C
3.72 I C = 16A
3.68
3.64
3.60
3.56
3.52
3.48
3.44
3.40
0
10 20 30 40 50
RG, Gate Resistance (Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 16A
16
12
8
4
0
0 10 20 30
Qg, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
40
100
RG = 23Ω
VGE = 15V
VCC = 480V
10
1
IC = 32A
I C = 16A
IC = 8.0A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-377
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