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PDF IRGBC30K-S Data sheet ( Hoja de datos )
| Número de pieza | IRGBC30K-S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 9.1132
IRGBC30K-S
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast Fast IGBT
Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
VCES = 600V
VCE(sat) ≤ 3.8V
@VGE = 15V, IC = 14A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
23
14
46
46
10
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
RθJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient, (PCB mount)**
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
—
—
2 (0.07)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
C-861
Max.
1.2
40
80
—
Units
°C/W
g (oz)
Revision 1
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IRGBC30K-S
1400
1200
1000
800
600
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = Cce + C gc
Cies
Coes
400
200 Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.80
VCC = 480V
VGE = 15V
TC = 25°C
0.76 I C = 14A
0.72
0.68
0.64
0.60
0
10 20 30 40 50
RG , Gate Resistance (Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 14A
16
12
8
4
0
0 10 20 30
Qg, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
40
10
RG = 23Ω
V GE = 15V
V CC = 480V
1
I C = 28A
I C = 14A
I C = 7.0A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-865
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| PDF Descargar | [ Datasheet IRGBC30K-S.PDF ] | |
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