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IRFZ24VSPbF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFZ24VSPbF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFZ24VSPbF fiche technique
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
PD - 95524
IRFZ24VSPbF
IRFZ24VLPbF
HEXFET® Power MOSFET
D VDSS = 60V
RDS(on) = 60m
ID = 17A
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ24VL) is available for low-profile applications.
D2Pak
IRFZ24VS
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V‡
Continuous Drain Current, VGS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
44
0.29
± 20
17
4.4
4.2
-55 to + 175
300 (1.6mm from case )
TO-262
IRFZ24VL
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
Typ.
–––
–––
Max.
3.4
40
Units
°C/W
1
7/16/04

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