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IRFU5505 fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFU5505
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFU5505 fiche technique
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR5505)
l Straight Lead (IRFU5505)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
leadwww.DataSheet4U.com version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD - 9.1610B
IRFR/U5505
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.11
ID = -18A
S
D-Pak
TO -252A A
I-Pak
TO -2 5 1 AA
Max.
-18
-11
-64
57
0.45
± 20
150
-9.6
5.7
-5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
8/25/97

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