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PDF IRF7835UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7835UPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96080A
IRF7835UPbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low Qrr
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
VDSS
30V
S
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
:4.5m @VGS = 10V 22nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
30
± 20
19
15
150
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through
are on page 9
www.irf.com
1
09/19/06
1 page  
IRF7835UPbF
20
16
12
8
4
0
25
50 75 100 125
TC, CaseTemperature (°C)
150
2.2
2.0
1.8
1.6 ID = 50µA
1.4
1.2
1.0
0.8
-75 -50 -25 0
25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
τJ τJ
τ1 τ1
R 1R1
CiC= iτ=i/τRi/iRi
R 2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 5.599447 0.010553
τ3τ3 27.35936 1.1984
17.0458 44.7
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7835UPBF.PDF ] | |
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