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PDF FDH45N50F Data sheet ( Hoja de datos )
| Número de pieza | FDH45N50F | |
| Descripción | 500V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDH45N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 45 A, 120 mΩ
November 2013
Features
• RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A
• Low Gate Charge (Typ. 105 nC)
• Low Crss (Typ. 62 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immuni-
ty is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter ap-
plications such as power factor correction (PFC), flat panel dis-
play (FPD) TV power, ATX and electronic lamp ballasts
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
FDH45N50F_F133
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
45
28.4
180
±30
1868
45
62.5
50
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
625
5
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2008 Fairchild Semiconductor Corporation
FDH45N50F Rev. C1
1
FDH45N50F_F133
0.2
40
Unit
°C/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Typical Switching Losses vs.
Gate Resistance
1,000
800
600
400
200
0
0
Eoff
Eon
Notes :
1. VDS = 400 V
2. VGS = 12 V
3. ID = 25A
4. TJ = 125oC?
5 10 15 20 25 30 35 40 45 50
RG, Gate resistance [Ω]
Figure 14. Unclamped Inductive Switching
Capability
100
Notes :
1. If R = 0 Ω
tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD)
2. If R ≠ 0 Ω
tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]
10 Starting TJ = 150oC
Starting TJ = 25oC
1
0.01 0.1 1 10
tAV, Time In Avalanche [ms]
100
Figure 15. Transient Thermal Resistance Curve
10-1 D=0.5
0.2
0.1
0.05
10-2 0.02
0.01
single pulse
Notes :
1. ZθJC(t) = 0.2 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
PDM
t1
t2
10-3
10-5
10-4
10-3
10-2
10-1
100
t1, Square W ave Pulse Duration [sec]
101
©2008 Fairchild Semiconductor Corporation
FDH45N50F Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDH45N50F.PDF ] | |
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