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Numéro de référence | IRF7325 | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
www.DataSheet4U.com
q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Low Profile (<1.8mm)
q Available in Tape & Reel
VDSS
-12V
PD- 94094
IRF7325
HEXFET® Power MOSFET
RDS(on) max (mΩ)
24@VGS = -4.5V
33@VGS = -2.5V
49@VGS = -1.8V
ID
±7.8A
±6.2A
±3.9A
Description
New P-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1
G1
S2
G2
18
27
36
45
Top V ie w
D1
D1
D2
D2
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-7.8
-6.2
-39
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
2/5/01
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Pages | Pages 9 | ||
Télécharger | [ IRF7325 ] |
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