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IRF3709ZCL fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF3709ZCL
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3709ZCL fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
PD - 95836
IRF3709ZCS
IRF3709ZCL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 6.3m: 17nC
D2Pak
IRF3709ZCS
TO-262
IRF3709ZCL
www.DataSheet4U.com
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 11
www.irf.com
Max.
30
± 20
87h
62h
350
79
40
0.53
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
Max.
1.89
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
1/16/04

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