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Numéro de référence | 2N5582 | ||
Description | (2N5581 / 2N5582) NPN SILICON SWITCHING TRANSISTOR | ||
Fabricant | Microsemi Corporation | ||
Logo | |||
1 Page
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423
Devices
2N5581
2N5582
Qualified Level
JAN
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = 250C (1)
@ TC = 250C (2)
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/0C for TA > 250C
2) Derate linearly 11.43 mW/0C for TC > 250C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
Value
50
75
6.0
800
0.5
2.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0C
TO-46*
(TO-206AB)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
Collector-Base Cutoff Current
VCB = 60 Vdc
ICBO
VCB = 75 Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
IEBO
VEB = 6.0Vdc
Min. Max.
Unit
50 Vdc
10 ηAdc
10 µAdc
10 ηAdc
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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Pages | Pages 2 | ||
Télécharger | [ 2N5582 ] |
No | Description détaillée | Fabricant |
2N5581 | NPN Silicon Small Signal Transistor | Motorola Semiconductors |
2N5581 | (2N5581 / 2N5582) NPN SILICON SWITCHING TRANSISTOR | Microsemi Corporation |
2N5581 | Silicon NPN Transistor | Semicoa Semiconductor |
2N5582 | Chip Type 2C2222A Geometry 0400 Polarity NPN | Semicoa Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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