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PDF 2N3485A Data sheet ( Hoja de datos )
| Número de pieza | 2N3485A | |
| Descripción | (2N3485A / 2N3486A) PNP SILICON SMALL SIGNAL TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
PNP SILICON SMALL SIGNAL TRANSISTOR
Qualified per MIL-PRF-19500/392
Devices
2N3485A
2N3486A
Qualified Level
JAN
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance Junction-to-Ambient
Junction-to-Case
1) Derate linearly 2.28 mW/0C above TA = +250C
2) Derate linearly 11.43 mW/0C above TC = +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
2N3485A
2N3486A
60
60
5.0
600
0.4
2.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0C
Symbol
RθJA
RθJC
Max.
0.439
87
Unit
0mC/W
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 50 Vdc
VCB = 60 Vdc
Emitter-Base Cutoff Current
ICBO
VEB = 3.5 Vdc
VEB = 5.0 Vdc
IEBO
Min.
60
TO-46*
(TO-206AB)
*See appendix A for
package outline
Max. Unit
Vdc
10 ηAdc
10 µAdc
50 ηAdc
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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