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PDF 2N3250A Data sheet ( Hoja de datos )
| Número de pieza | 2N3250A | |
| Descripción | (2N3250A / 2N3251A) PNP SILICON SWITCHING TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/323
Devices
2N3250A
2N3251A
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
1) Derate linearly 2.4 W/0C for TA > +250C
2) Derate linearly 8.0 W/0C for TC > +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
RθJA(1)(2)
Value
60
60
5.0
200
0.36
1.2
-65 to +175
Units
Vdc
Vdc
Vdc
mAdc
W
W
0C
Max.
417
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Emitter Cutoff Voltage
V(BR)CEO
VBE = 3.0 Vdc, VCE = 40 Vdc
Collector-Base Cutoff Current
ICEX
VCB = 60 Vdc
ICBO
VCB = 40 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Voltage
VBE = 3.0 Vdc, VCE = 40 Vdc
IEBO
ICEX
Min.
60
TO-39*
(TO-205AD)
*See appendix A for
package outline
Max.
Unit
Vdc
20 ηAdc
10 µAdc
20 ηAdc
10 µAdc
50 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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| PDF Descargar | [ Datasheet 2N3250A.PDF ] | |
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