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Número de pieza | FQH90N15 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQH90N15 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
• 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
• Low gate charge (typical 220 nC)
• Low Crss (typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
October 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifire, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
GD S
TO-247
FQH Series
G DS
TO-3P
FQA Series
{D
z
G{
z
z
{S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQH90N15/FQA90N15
150
90
63.5
360
±25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
Min.
--
0.24
--
Max.
0.4
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQH90N15 / FQA90N15 Rev. C
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQH90N15 / FQA90N15 Rev. C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FQH90N15.PDF ] |
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