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Numéro de référence | NX5313 | ||
Description | LASER DIODE | ||
Fabricant | CEL | ||
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PRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE NX5313 SERIES
FOR FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
Po = 13.0 mW
• LOW THRESHOLD CURRENT :
Ith = 6 mA
• DIFFERENTIAL EFFICIENCY:
ηd =0.5 W/A
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
6.35 mm
• LD BEAM ANGLE OPTIMIZED FOR 8 DEGREE
ANGLED SMF
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 Km) system
DESCRIPTION
NEC's NX5313 Series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. These devices are designed for application
up to 1.25 Gb/s.
California Eastern Laboratories
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Pages | Pages 4 | ||
Télécharger | [ NX5313 ] |
No | Description détaillée | Fabricant |
NX5310 | LASER DIODE | CEL |
NX5311 | LASER DIODE | CEL |
NX5312 | LASER DIODE | NEC |
NX5313 | LASER DIODE | CEL |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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