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NX5313 fiches techniques PDF

CEL - LASER DIODE

Numéro de référence NX5313
Description LASER DIODE
Fabricant CEL 
Logo CEL 





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NX5313 fiche technique
PRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE NX5313 SERIES
FOR FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
Po = 13.0 mW
• LOW THRESHOLD CURRENT :
Ith = 6 mA
• DIFFERENTIAL EFFICIENCY:
ηd =0.5 W/A
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
6.35 mm
• LD BEAM ANGLE OPTIMIZED FOR 8 DEGREE
ANGLED SMF
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 Km) system
DESCRIPTION
NEC's NX5313 Series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. These devices are designed for application
up to 1.25 Gb/s.
California Eastern Laboratories

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