DataSheetWiki


IRLR2905Z fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRLR2905Z
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRLR2905Z fiche technique
AUTOMOTIVE MOSFET
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
PD - 95848
IRLR2905Z
IRLU2905Z
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 13.5m
ID = 42A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRLR2905Z
I-Pak
IRLU2905Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
ijRθJA Junction-to-Ambient (PCB mount)
jRθJA Junction-to-Ambient
Max.
60
43
42
240
110
0.72
± 16
57
85
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
3/2/04

PagesPages 11
Télécharger [ IRLR2905Z ]


Fiche technique recommandé

No Description détaillée Fabricant
IRLR2905 Power MOSFET ( Transistor ) International Rectifier
International Rectifier
IRLR2905PBF Power MOSFET ( Transistor ) International Rectifier
International Rectifier
IRLR2905Z Power MOSFET ( Transistor ) International Rectifier
International Rectifier
IRLR2905ZPBF Power MOSFET ( Transistor ) International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche