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PDF IRLML2803PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLML2803PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRLML2803PbF
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
G1
S2
HEXFET® Power MOSFET
VDSS = 30V
3D
RDS(on) = 0.25Ω
A customized leadframe has been incorporated into the standard
SOT-23 package to produce a HEXFET Power MOSFET with
the industry's smallest footprint. This package, dubbed the
Micro3, is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Micro3™
Base Part Number
IRLML2803TRPbF
Package Type
Micro3™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML2803TRPbF
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
TJ ,TSTG
Gate-to-Source Voltage
gSingle Pulse Avalanche Energy
dPeak diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
1.2
0.93
7.3
540
4.3
±20
3.9
5.0
-55 to + 150
Units
A
mW
mW/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
fRθJA Maximum Junction-to-Ambient
Typ.
–––
Max.
230
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
April 24, 2014
1 page  
IRLML2803PbF
10V
QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-
VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100 D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
April 24, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLML2803PBF.PDF ] | |
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