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IRG4PSC71K fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG4PSC71K
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4PSC71K fiche technique
PD - 91683A
PRELIMINARY
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71K
Short Circuit Rated
UltraFast IGBT
Features
• Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
• High abort circuit rating IGBTs, optimized for
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
• Creepage distance increased to 5.35mm
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.83V
@VGE = 15V, IC = 60A
Benefits
• Highest current rating IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tSC
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Ž
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance\ Mechanical
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
SUPER - 247
Max.
600
85†
60
200
200
10
± 20
180
350
140
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
µs
V
mJ
W
°C
Min.
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/11/99

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