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PDF IRG4BC40W Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC40W | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRG4BC40W (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91654A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40W
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
TO-220AB
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
0.77
–––
80
–––
Units
°C/W
g (oz)
1
4/24/2000
1 page  
4000
3000
2000
1000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.0
VCC = 480V
VGE = 15V
0.9 TJ = 25 °C
IC = 20A
0.8
0.7
0.6
0.5
0.4
0.3
10
20 30 40 50
RG , Gate Resistance ((ΩO)hm)
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
IRG4BC40W
20
VCC = 400V
I C = 20A
16
12
8
4
0
0 20 40 60 80 100
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG = 10OΩhm
VGE = 15V
VCC = 480V
1
IC = 40 A
IC = 20 A
IC = 10 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC40W.PDF ] | |
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