DataSheetWiki


IRFU9N20DPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFU9N20DPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRFU9N20DPBF fiche technique
PD - 95376A
SMPS MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
IRFR9N20DPbF
IRFU9N20DPbF
HEXFET® Power MOSFET
RDS(on) max
0.38
ID
9.4A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR9N20D
I-Pak
IRFU9N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes  through † are on page 10
www.irf.com
Max.
9.4
6.7
38
86
0.57
± 30
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
1
12/06/04

PagesPages 10
Télécharger [ IRFU9N20DPBF ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFU9N20DPBF HEXFET Power MOSFET International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche