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IRFU3418PBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFU3418PBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFU3418PBF fiche technique
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
80V
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD - 95516A
IRFR3418PbF
IRFU3418PbF
HEXFET® Power MOSFET
RDS(on) Max
14m:
ID
30A
D-Pak
IRFR3418
I-Pak
IRFU3418
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount) *
RθJA Junction-to-Ambient
Max.
80
± 20
70h
50
280
140
3.8
0.95
5.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
Notes  through † are on page 10
www.irf.com
1
12/03/04

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