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PDF IRFPS40N50L Data sheet ( Hoja de datos )
| Número de pieza | IRFPS40N50L | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 93923B
SMPS MOSFET IRFPS40N50L
Applications
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l ZVS and High Frequency Circuit
VDSS
500V
RDS(on) typ.
0.087Ω
ID
46A
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
SUPER TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
46
29 A
180
540 W
4.3 W/°C
VGS Gate-to-Source Voltage
dv/dtPeak Diode Recovery dv/dt
± 30 V
25 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
-55 to + 150
300
°C
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
––– ––– 46
––– ––– 180
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– ––– 1.5 V TJ = 25°C, IS = 46A, VGS = 0V
––– 170 250 ns TJ = 25°C
––– 220 330
TJ = 125°C
IF = 46A
di/dt = 100A/µs
––– 705 1060 nC TJ = 25°C
––– 1.3 2.0 µC TJ = 125°C
––– 9.0 ––– A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
www.irf.com
1
05/09/01
1 page  
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
IRFPS40N50L
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.01 0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFPS40N50L.PDF ] | |
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