IRFPS38N60LPBF Datasheet PDF - International Rectifier
| Part Number | IRFPS38N60LPBF | |
| Description | HEXFET Power MOSFET | |
| Manufacturers | International Rectifier | |
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SMPS MOSFET
PD - 95701
IRFPS38N60LPbF
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
• Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 120mΩ 170ns 38A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
SUPER TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
38
24
150
540
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
4.3
±30
13
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 38
MOSFET symbol
D
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 150
––– ––– 1.5
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 38A, VGS = 0V
S
ftrr Reverse Recovery Time
––– 170 250 ns TJ = 25°C, IF = 38A
––– 420 630
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 830 1240 nC TJ = 25°C, IS = 38A, VGS = 0V
f––– 2600 3900
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 9.1 14 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
9/10/04
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IRFPS38N60LPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
40
35
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
Fig 10. Maximum Drain Current vs.
Case Temperature
150
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
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| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFPS38N60LPBF.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| IRFPS38N60LPBF | The function is HEXFET Power MOSFET. International Rectifier | |
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