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Numéro de référence | IRFPS35N50L | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
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1 Page
PD- 94227A
SMPS MOSFET IRFPS35N50L
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 0.125Ω 170ns 34A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
34
22
140
450
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.6
±30
15
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
1.1(10)
Min. Typ. Max. Units Conditions
––– ––– 34
MOSFET symbol
N•m (lbf•in)
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 140
––– ––– 1.5
integral reverse
fp-n junction diode.
V TJ = 25°C, IS = 34A, VGS = 0V
ftrr Reverse Recovery Time
––– 170 250 ns TJ = 25°C, IF = 34A
––– 220 330
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 670 1010 nC TJ = 25°C, IS = 34A, VGS = 0V
f––– 1500 2200
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 8.5 ––– A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
8/26/04
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Pages | Pages 8 | ||
Télécharger | [ IRFPS35N50L ] |
No | Description détaillée | Fabricant |
IRFPS35N50L | HEXFET Power MOSFET | International Rectifier |
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