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IRFPS35N50L fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFPS35N50L
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFPS35N50L fiche technique
PD- 94227A
SMPS MOSFET IRFPS35N50L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 0.125170ns 34A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
34
22
140
450
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.6
±30
15
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
1.1(10)
Min. Typ. Max. Units Conditions
––– ––– 34
MOSFET symbol
N•m (lbf•in)
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 140
––– ––– 1.5
integral reverse
fp-n junction diode.
V TJ = 25°C, IS = 34A, VGS = 0V
ftrr Reverse Recovery Time
––– 170 250 ns TJ = 25°C, IF = 34A
––– 220 330
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 670 1010 nC TJ = 25°C, IS = 34A, VGS = 0V
f––– 1500 2200
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 8.5 ––– A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
8/26/04

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