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IRFPS29N60L fiches techniques PDF

International Rectifier - SMPS MOSFET

Numéro de référence IRFPS29N60L
Description SMPS MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFPS29N60L fiche technique
PD - 94622
SMPS MOSFET IRFPS29N60L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 175m130ns 29A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
29
18
110
480
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.8
±30
12
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 29
MOSFET symbol
(Body Diode)
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
ton
www.irf.com
Reverse Recovery Current
Forward Turn-On Time
A showing the
––– ––– 110
integral reverse
––– ––– 1.5
fp-n junction diode.
V TJ = 25°C, IS = 29A, VGS = 0V
––– 130 190 ns TJ = 25°C, IF = 29A
f––– 240 360
TJ = 125°C, di/dt = 100A/µs
f––– 630 950 nC TJ = 25°C, IS = 29A, VGS = 0V
f––– 1820 2720
TJ = 125°C, di/dt = 100A/µs
––– 9.4 14 A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
2/6/03

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