IRFP22N60K Datasheet PDF - International Rectifier
| Part Number | IRFP22N60K | |
| Description | SMPS MOSFET | |
| Manufacturers | International Rectifier | |
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There is a preview and IRFP22N60K download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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PD - 94414A
SMPS MOSFET IRFP22N60K
HEXFET® Power MOSFET
Applications
l Hard Switching Primary or PFS Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
VDSS
600V
RDS(on) typ.
240mΩ
ID
22A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
22
14
88
370
2.9
± 30
18
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
380
22
37
Units
mJ
A
mJ
Max.
0.34
–––
40
Units
°C/W
1
8/26/04
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25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
IRFP22N60K
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFP22N60K electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFP22N60K.PDF Datasheet ] | |
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