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PDF IRFIB8N50K Data sheet ( Hoja de datos )
| Número de pieza | IRFIB8N50K | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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SMPS MOSFET
PD - 94444
IRFIB8N50K
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
VDSS
500V
HEXFET® Power MOSFET
RDS(on) typ.
ID
290mΩ
6.7A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
cIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
TO-220
FULL-PAK
Max.
6.7
4.2
27
45
0.36
±30
17
-55 to + 150
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
–––
Max.
290
6.7
4.5
Typ.
–––
–––
Max.
2.76
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
mJ
A
mJ
Units
°C/W
www.irf.com
1
4/21/04
1 page  
IRFIB8N50K
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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