|
|
Numéro de référence | IRFB260NPBF | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 95473
SMPS MOSFET
IRFB260NPbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
RDS(on) max
0.040Ω
ID
56A
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
56
40
220
380
2.5
± 20
10
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
Notes through
are on page 8
www.irf.com
1
7/7/04
|
|||
Pages | Pages 8 | ||
Télécharger | [ IRFB260NPBF ] |
No | Description détaillée | Fabricant |
IRFB260NPBF | HEXFET Power MOSFET | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |