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IRF820ASPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF820ASPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF820ASPBF fiche technique
PD - 95533
SMPS MOSFET
IRF820ASPbF
IRF820ALPbF
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l Lead-Free
VDSS
500V
RDS(on) max
3.0
ID
2.5A
Benefits
l Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D2Pak
IRF820AS
TO-262
IRF820AL
www.DataSheet4U.com
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V†
Continuous Drain Current, VGS @ 10V†
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
2.5
1.6
10
50
0.4
± 30
3.4
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Two Transistor Forward
l Half Bridge and Full Bridge
Notes  through … are on page 8
www.irf.com
1
7/20/04

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