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PDF IRF7304 Data sheet ( Hoja de datos )
| Número de pieza | IRF7304 | |
| Descripción | Generation V Technology | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRF7304 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1240B
IRF7304
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Description
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
VDSS = -20V
RDS(on) = 0.090Ω
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Junction-to-Amb. (PCB Mount, steady state)**
Max.
-4.0
-3.6
-2.9
-14
1.4
0.011
±8.0
-1.2
-55 to + 150
Min.
––––
Typ.
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
127
Units
A
A
A
A
W
W/°C
V
V/ns
°C
Max.
90
Units
°C/W
To Order
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IRF7304
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
4.0
10
1ms
10ms
1
100ms
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
3.0
2.0
1.0
0.0
25
50 75 100 125
TA, Ambient Temperature (°C)
A
150
Fig 9. Maximum Drain Current Vs. Ambient
Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
131
To Order
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRF7304.PDF ] | |
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