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International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF3808PBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3808PBF fiche technique
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PD - 94972
IRF3808PbF
AUTOMOTIVE MOSFET
Typical Applications
HEXFET® Power MOSFET
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free
D
VDSS = 75V
Benefits
Advanced Process Technology
Ultra Low On-Resistance
G
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
S
Repetitive Avalanche Allowed up to Tjmax
Description
Designed specifically for Automotive applications, this Advanced
RDS(on) = 0.007
ID = 140A†
Planar Stripe HEXFET ® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
TO-220AB
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
140†
97†
550
330
2.2
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
02/02/04

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