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IRF3000PBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF3000PBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3000PBF fiche technique
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SMPS MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
300V
PD- 95255
IRF3000PbF
HEXFET® Power MOSFET
RDS(on) max
ID
0.40W@VGS = 10V 1.6A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.6
1.3
13
2.5
0.02
± 30
8.9
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
09/20/04

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