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PDF XP1025-BD Data sheet ( Hoja de datos )
| Número de pieza | XP1025-BD | |
| Descripción | GaAs MMIC Power Amplifier | |
| Fabricantes | Mimix Broadband | |
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28.0-31.0 GHz GaAs MMIC
Power Amplifier
March 2007 - Rev 05-Mar-07
Features
Ka-Band 1 W Power Amplifier
27.0 dB Small Signal Gain
+30.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
P1025-BD
Chip Device Layout
XP1025-BD
General Description
Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC
power amplifier has a small signal gain of 27.0 dB with
+30.0 dBm saturated output power.This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography
to ensure high repeatability and uniformity.The chip has
surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process.This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
www.DataSheet4U.com
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
112,170,450 mA
+0.3 VDC
TBD
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat) 2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Units Min. Typ. Max.
GHz 28.0 - 31.0
dB - 10.0 -
dB - 10.0 -
dB - 27.0 -
dB - +/-1.0 -
dB - 50.0 -
dBm - +30.0 -
VDC - +5.0 +6.0
VDC -1.0 -0.7 0.0
mA - 100 112
mA - 150 170
mA - 400 450
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
28.0-31.0 GHz GaAs MMIC
Power Amplifier
March 2007 - Rev 05-Mar-07
P1025-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Part Number for Ordering
XP1025-BD-000V
XP1025-BD-EV1
Description
RoHS compliant die packed in vacuum release gel packs
XP1025-BD evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
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