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PDF XP1010 Data sheet ( Hoja de datos )

Número de pieza XP1010
Descripción GaAs MMIC Power Amplifier
Fabricantes Mimix Broadband 
Logotipo Mimix Broadband Logotipo



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No Preview Available ! XP1010 Hoja de datos, Descripción, Manual

21.0-24.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
Features
Excellent Linear Output Amplifier Stage
19.0 dB Small Signal Gain
+30.0 dBm P1dB Compression Point
+39.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +39.0 dBm.This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
orwww.DataSheet4U.com eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Velocium Products
18 - 20 GHz HPA
- APH478
P1010
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.5 VDC
600,670 mA
+0.3 VDC
+15 dBm
-65 to +165 OC
-55 to MTTF TAble3
MTTF Table 3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB) 2
Output Third Order Intercept Point (OIP3)1,2
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=5.0V, Vg=-0.3V Typical)
Units Min. Typ. Max.
GHz 21.0 - 24.0
dB - 12.0 -
dB - 10.0 -
dB - 19.0 -
dB - +/-0.5 -
dB - - -
dBm - +30.0 -
dBm - +39.0 -
VDC - +5.0 -
VDC -1.0 -0.3 0.0
mA - 950 -
(1) Measured at +18 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

1 page




XP1010 pdf
21.0-24.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
Mechanical Drawing
1.310
(0.052)
0.718
(0.028)
1
P1010
2 0.719
(0.028)
0.0
0.0
65
0.628 1.028
(0.025) (0.041)
43
2.858 3.258
(0.113) (0.128)
4.490
(0.177)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.647 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (RF Out)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vg2)
Bond Pad #5 (Vd1)
Bond Pad #6 (Vg1)
Bias Arrangement
RF In 1
65
10
Vg1
Vd1
2 RF Out
4
10
Vg2
3
Vd2
Bypass Capacitors - See App Note [2]
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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