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Fairchild Semiconductor - (DF01S - DF08S) Bridge Rectifiers

Numéro de référence DF02S
Description (DF01S - DF08S) Bridge Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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DF02S fiche technique
DF005S - DF10S
Bridge Rectifiers
Features
• Surge overload rating: 50 amperes peak.
• Glass passivated junction.
• Low leakage.
• UL certified, UL #E111753.
+
-
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SDIP
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Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
005S 01S 02S 04S 06S
VRRM
VRMS
VR
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR)
Average Recitified Forward Current
@ TA = 40°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
50 100 200 400 600
35 70 140 280 420
50 100 200 400 600
1.5
50
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
08S
800
560
800
10S
1000
700
1000
Units
V
V
V
A
A
°C
°C
Symbol
Parameter
PD
RθJA
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
* Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage, per element @ 1.0A
IR Reverse Current, per element @ Rated VR
TA = 25°C
TA = 125°C
I2t Rating for Fusing t < 8.35ms
CT Total Capacitance, per leg
VR = 4.0v, f = 1.0MHz
Value
3.1
40
Value
1.1
50
500
10
25
Units
W
°C/W
Units
V
µA
µA
A2s
pF
©2005 Fairchild Semiconductor Corporation
DF005S - DF10S Rev. C1
1
www.fairchildsemi.com

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