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Número de pieza | HI13003 | |
Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
Fabricantes | Hi-Sincerity Mocroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HI13003 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9034
Issued Date : 1999.03.17
Revised Date : 2002.05.08
Page No. : 1/3
HI13003
NPN EPITAXIAL PLANAR TRANSISTOR
Description
These devices are designed for high-voltage, high-speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220V switchmode applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
TO-251
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
Total Power Dissipation (Ta=25°C) .................................................................................... 1.3 W
• Maximum Voltages and Currents (Ta=25°C)
BVCEV Collector to Emitter Voltage .................................................................................. 700 V
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VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 9 V
IC Collector Current ........................................................................................................... 1.5 A
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCEV
IEBO
ICEV
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
Cob
Min.
400
700
-
-
-
-
-
-
-
8
5
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
21
Max.
-
-
1
1
0.5
1
3
1
1.2
40
25
-
Unit Test Conditions
V IC=10mA
V IC=1mA, VBE(OFF)=1.5V
mA VEB=9V
mA VCE=700V, VBE(OFF)=1.5V
V IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
V IC=1.5A, IB=0.5A
V IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
IC=0.5A, VCE=2V
VCE=2V, IC=1A
pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HI13003
HSMC Product Specification
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet HI13003.PDF ] |
Número de pieza | Descripción | Fabricantes |
HI13003 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
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