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Número de pieza | HI117 | |
Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
Fabricantes | Hi-Sincerity Mocroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HI117 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 1/4
HI117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI117 is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................................... 25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................. -100 V
BVCEO Collector to Emitter Voltage............................................................................................... -100 V
BVEBO Emitter to Base Voltage ......................................................................................................... -5 V
IC Collector Current (Continue) .......................................................................................................... -4 A
IC Collector Current (Peak) ................................................................................................................ -6 A
Characteristicswww.DataSheet4U.com (Ta=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-100
-100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Darlington Schematic
Max.
-
-
-1
-2
-2
-2.5
-2.8
-
-
200
Unit Test Conditions
V IC=-1mA
V IC=-30mA
mA VCB=-100V
mA VCE=-50V
mA VEB=-5V
V IC=-2A, IB=-8mA
V IC=-2A, VCE=-4V
K IC=-1A, VCE=-4V
IC=-2A, VCE=-4V
pF VCB=-10V, f=0.1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
C
B
R1 R2
E
HI117
HSMC Product Specification
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet HI117.PDF ] |
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