DMN2112SN Datasheet PDF - Diodes Incorporated
| Part Number | DMN2112SN | |
| Description | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Manufacturers | Diodes Incorporated | |
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DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
• Case: SC-59
• Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
A
D
BC
G TOP VIEW S
ED
G
H
K
J
Drain
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
M
L
ESD Protected
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
Pd
RθJA
Tj, TSTG
Value
20
±8
1.2
4.0
500
250
-55 to +150
SC-59
Dim Min Max
A 0.30 0.50
B 1.40 1.80
C 2.50 3.00
D 0.85 1.05
E 0.30 0.70
G 1.70 2.10
H 2.70 3.10
J ⎯ 0.10
K 1.00 1.40
L 0.55 0.70
M 0.10 0.35
α 0° 8°
All Dimensions in mm
Units
V
V
A
mW
°C /W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Symbol Min Typ Max Unit
Test Condition
@ Tj = 25°C
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯ ⎯ V VGS = 0V, ID = 250µA
⎯ 10 µA VDS = 20V, VGS = 0V
⎯ ± 10 µA VGS = ± 8V, VDS = 0V
VGS(th)
0.5
⎯
1.2
V VDS = 10V, ID = 1.0mA
Static Drain-Source On-Resistance
RDS (ON)
⎯
0.10
VGS = 4.5V, ID = 0.5A
⎯ 0.14 Ω VGS = 2.5V, ID = 0.5A
0.25
VGS = 1.5V, ID = 0.1A
Forward Transfer Admittance
IYfsI ⎯ 4.2 ⎯
S VDS = 10V, ID =0.5A
Diode Forward Voltage
VSD
⎯
0.8 1.1
V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss ⎯ 220 ⎯
Coss ⎯ 120 ⎯
Crss
⎯
45
⎯
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
⎯
10
⎯
ns
Turn-Off Delay Time
Turn-On Rise Time
tD(OFF)
⎯
75
⎯
ns VDD = 5V, ID = 0.5A,
tr ⎯ 15 ⎯ ns VGS = 10V, RGEN = 50Ω
Turn-Off Fall Time
tf ⎯ 65 ⎯ ns
Notes:
1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30830 Rev. 3 - 2
1 of 3
www.diodes.com
DMN2112SN
© Diodes Incorporated
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DMN2112SN electronic component. |
| Information | Total 3 Pages | |
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| Download | [ DMN2112SN.PDF Datasheet ] | |
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