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DCX100NS fiches techniques PDF

Diodes Incorporated - 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

Numéro de référence DCX100NS
Description 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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DCX100NS fiche technique
Lead-free Green
DCX100NS
100mA DUAL COMPLEMENTARY PRE-BIASED
TRANSISTORS
General Description
· DCX100NS is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete PNP pass transistor which can
support continuous maximum current up to 100 mA. It also
contains an NPN transistor which can be used as a control
switch and also it can be biased using higher supply. The
component devices can be used as part of a circuit or
as stand alone discrete devices.
Features
· Built in Biasing Resistors
· Epitaxial Planar Die Construction
· Lead Free By Design/ROHS Compliant (Note 1)
· "Green" Device (Note 2)
· Ideally Suited for Automated Assembly Processes
Mechanical Data
· Case: SOT-563
· Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Fig. 2
· Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
· Marking & Type Code Information: See Page 5
· Ordering Information: See Page 5 and 6
· Weight: 0.005 grams (approximate)
5
6
4
3
2
1
Fig. 1: SOT-563
CQ1 BQ2 EQ2
654
DDTA113ZE_DIE
R1
Q1
1k
R2 10k
R4 10k
R3
Q2
10k
DDTC114EE_DIE
SOT563
1
2
3
EQ1 BQ1 CQ2
Fig. 2: Schematic and Pin Configuration
Sub-Component P/N
DDTA113ZE_DIE
DDTC114EE_DIE
Reference
Q1
Q2
Device Type
PNP
NPN
R1 (NOM)
1KW
¾
R2 (NOM)
10KW
¾
R3, R4 (NOM)
¾
10KW
Figure
2
2
Maximum Ratings: Total Device @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Junction Temperature Range
Collector Current (using PNP as Pass Transistor)
Symbol
Pd
RqJA
Tj, Tstg
IC(max)
Value
150
833
-55 to +150
100
Unit
mW
°C/W
°C
mA
Sub-Component Device - Pre-Biased PNP Transistor @ TA = 25°C unless otherwise specified
Supply Voltage
Input Voltage
Output Current
Characteristic
Symbol
Vcc
Vin
Ic
Value
-50
+5 to -10
-100
Unit
V
V
mA
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30761 Rev. 4 - 2
1 of 7
DCX100NS
www.diodes.com
ã Diodes Incorporated

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