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PDF EM6A9160 Data sheet ( Hoja de datos )
| Número de pieza | EM6A9160 | |
| Descripción | 8M x 16 DDR Synchronous DRAM | |
| Fabricantes | Etron Technology | |
| Logotipo |  |
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EtronTech
EM6A9160
8M x 16 DDR Synchronous DRAM (SDRAM)
(Rev. 1.4 May/2006)
Features
• Fast clock rate: 300/275/250/200MHz
• Differential Clock CK & /CK
• Bi-directional DQS
• DLL enable/disable by EMRS
• Fully synchronous operation
• Internal pipeline architecture
• Four internal banks, 1M x 16-bit for each bank
• Programmable Mode and Extended Mode registers
- /CAS Latency: 3, 4
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• Individual byte write mask control
• DM Write Latency = 0
• Auto Refresh and Self Refresh
• 4096 refresh cycles / 32ms
• Precharge & active power down
• Power supplies: VDD & VDDQ = 2.5V ± 5%
• Interface: SSTL_2 I/O Interface
• Package: 66 Pin TSOP II, 0.65mm pin pitch
• Lead-free Package is available.
Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BS0
BS1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66 VSS
65 DQ15
64 VSSQ
63 DQ14
62 DQ13
61 VDDQ
60 DQ12
59 DQ11
58 VSSQ
57 DQ10
56 DQ9
55 VDDQ
54 DQ8
53 NC
52 VSSQ
51 UDQS
50 NC
49 VREF
48 VSS
47 UDM
46 /CK
45 CK
44 CKE
43 NC
42 NC
41 A11
40 A9
39 A8
38 A7
37 A6
36 A5
35 A4
34 VSS
Ordering Information
Part Number
Clock Frequency
EM6A9160TS-3.3/3.3G*
300MHz
EM6A9160TS-3.6/3.6G
275MHz
EM6A9160TS-4/4G
250MHz
EM6A9160TS-5/5G
200MHz
Note : “G” indicates Pb-free package
Data Rate
600Mbps/pin
550Mbps/pin
500Mbps/pin
400Mbps/pin
Package
TSOP II
TSOP II
TSOP II
TSOP II
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
1 page  
EtronTech
8Mx16 DDR SDRAM
EM6A9160
VDD
VSS
VDDQ
VSSQ
VREF
NC
Supply Power Supply: +2.5V ±5%
Supply Ground
Supply DQ Power: +2.5V ±5%. Provide isolated power to DQs for improved noise immunity.
Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity.
Supply Reference Voltage for Inputs: +0.5*VDDQ
- No Connect: These pins should be left unconnected.
5
Rev. 1.4
May 2006
5 Page 
EtronTech
8Mx16 DDR SDRAM
Capacitance (VDD = 2.5V, f = 1MHz, Ta = 25 °C)
Symbol
CIN
CI/O
Parameter
Input Capacitance (except for CK pin)
Input Capacitance (CK pin)
DQ, DQS, DM Capacitance
Min.
2.5
2.5
4
Max.
4
4
6.5
Note: These parameters are periodically sampled and are not 100% tested.
EM6A9160
Unit
pF
pF
pF
11
Rev. 1.4
May 2006
11 Page | ||
| Páginas | Total 29 Páginas | |
| PDF Descargar | [ Datasheet EM6A9160.PDF ] | |
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