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Numéro de référence | EM66932A | ||
Description | 4M x 32 Hand-Held Low Power SDRAM | ||
Fabricant | Etron Technology | ||
Logo | |||
EtronTech
EM66932A
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
Preliminary (Rev 0.1 June/2003)
Features
• Clock rate: 133/125/100 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Four internal banks (1M x 32bit x 4bank)
• Programmable Mode
- CAS# Latency: 1, 2 & 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential & Interleave
- Burst-Read-Single-Write
- Driving Strenght : Full & Half
- PASR (Partial Array Self Refresh)
- TCSR (Temperature Compensated Self Refresh)
• Burst stop function
• Individual byte controlled by DQM0-3
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• Single 3.0V, or 3.3V power supply
• Interface: LVTTL
•Package : 90 ball-FBGA, 11x13mm, Lead Free
Ordering Information
Part Number
EM66932ABG-7.5G
EM66932ABG-8G
EM66932ABG-1H/LG
Frequency
133MHz
125MHz
100MHz
Package
11x13 BGA
11x13 BGA
11x13 BGA
Pin Assignment : Top View
12
A DQ26
B DQ28
C VSSQ
D VSSQ
E VDDQ
F VSS
G A4
H A7
J CLK
K DQM1
L VDDQ
M VSSQ
N VSSQ
P DQ11
R DQ13
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
3
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
NC
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
4567 8 9
VDD
VDDQ
DQ22
DQ17
NC
A2
A10
NC
BA0
CAS#
VDD
DQ6
DQ1
VDDQ
VDD
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BA1
CS#
WE#
DQ7
DQ5
DQ3
VSSQ
DQ0
DQ21
DQ19
VDDQ
VDD1Q
VSSQ
VDD
A1
A11
RAS#
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
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Pages | Pages 20 | ||
Télécharger | [ EM66932A ] |
No | Description détaillée | Fabricant |
EM669325 | 4M x 32 Low Power SDRAM | Etron Technology |
EM66932A | 4M x 32 Hand-Held Low Power SDRAM | Etron Technology |
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