PDF EM584161 Data sheet ( Hoja de datos )

Número de pieza	EM584161
Descripción	256K x 16 Low Power SRAM
Fabricantes	Etron Technology
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No Preview Available ! EtronTech EM584161 256K x 16 Low Power SRAM Rev 2.0 11/2003 Features • Single power supply voltage of 1.65V to 1.95V • Power down features using CE1# and CE2 • Low power dissipation • Data retention supply voltage: 0.9V to 1.95V • Direct TTL compatibility for all input and output • Wide operating temperature range: -40°C to 85°C • Standby current @ VDD = 1.95 V ISB Maximum EM584161BA/BC-70/85 8 µA EM584161BA-70E/85E 80 µA Ordering Information Part Number EM584161BC-70 EM584161BA-70 EM584161BA-70E EM584161BC-85 EM584161BA-85 EM584161BA-85E Speed 70 ns 70 ns 70 ns 85 ns 85 ns 85 ns ISB 8 µA 8 µA 80 µA 8 µA 8 µA 80 µA Package 6x8 BGA 8x10 BGA 8x10 BGA 6x8 BGA 8x10 BGA 8x10 BGA Overview Pin Configuration 48-Ball BGA (CSP), Top View 12345 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D GND DQ11 A17 A7 DQ3 VDD E VDD DQ12 NC A16 DQ4 GND F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 NC A12 A13 WE# DQ7 H NC A8 A9 A10 A11 NC Pin Description Symbol A0 - A17 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range from -40°C to 85°C, the EM584161 can be used in environments exhibiting extreme temperature conditions. Etron Technology, Inc. No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice. 1 page EtronTech EM584161 AC Characteristics and Operating Conditions(Ta = -40°C to 85°C, VDD = 1.65V to 1.95V) Read Cycle EM584161 Symbol Parameter -85 -70 Unit Min Max Min Max tRC tAA tCO1 tCO2 tOE tBA tLZ tOLZ tBLZ tHZ tOHZ tBHZ tOH Write Cycle Read cycle time Address access time Chip Enable (CE1#) Access Time Chip Enable (CE2) Access Time Output enable access time Data Byte Control Access Time Chip Enable Low to Output in Low-Z Output enable Low to Output in Low-Z Data Byte Control Low to Output in Low-Z Chip Enable High to Output in High-Z Output Enable High to Output in High-Z Data Byte Control High to Output in High-Z Output Data Hold Time Symbol Parameter 85 − 70 − − 85 − 70 − 85 − 70 − 85 − 70 − 45 − 35 − 45 − 35 10 − 10 − 3−3− 5−5− − 35 − 25 − 35 − 25 − 35 − 25 10 − 10 − ns EM584161 -85 -70 Min Max Min Max Unit tWC tWP tCW tBW tAS tWR tWHZ tOW tDS tDH Write cycle time Write pulse width Chip Enable to end of write Data Byte Control to end of Write Address setup time Write Recovery time WE# Low to Output in High-Z WE# High to Output in Low-Z Data Setup Time Data Hold Time 85 − 70 − 55 − 55 − 70 − 60 − 70 − 60 − 0−0− 0−0− − 35 − 30 5−5− 35 − 30 − 0−0− ns AC Test Condition • Output load : 30pF + one TTL gate • Input pulse level : 0.2V, VDD-0.2V • Timing measurements : 0.5 x VDD • tR, tF : 5ns 5 Rev 2.0 Nov. 2003 5 Page EtronTech EM584161 Data Retention Characteristics (Ta = -40°C to 85°C) Symbol Parameter VDR Data Retention Supply Voltage CE1# ≥ VDD - 0.2V, CE2 ≤ 0.2V, VIN ≥ VDD - 0.2V or VIN ≤ 0.2V IDR Data Retention Current VDD = 0.9V, CE1# ≥ VDD - 0.2V, CE2 ≤ 0.2V, VIN ≥ VDD - 0.2V or VIN ≤ 0.2V tSDR Chip Deselect to Data Retention Mode Time tRDR Recovery Time CE1# Controlled Data Retention Mode VDD 1.65V tSDR Data Retention Mode Min 0.9 − 0 tRC tRDR Typ Max Unit − 1.95 V − 4.0 µA − − ns − − ns 1.4V VDR CE1#, LB#/UB# GND Note 1 CE2 Controlled Data Retention Mode VDD 1.65V CE2 tSDR Data Retention Mode VDR 0.4V GND Note 2 Note: 1. CE1# ≥ VDD – 0.2V or UB# = LB# ≥ VDD – 0.2V 2. CE2 ≤ 0.2V tRDR 11 Rev 2.0 Nov. 2003 11 Page

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