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PDF EM566169BC Data sheet ( Hoja de datos )
| Número de pieza | EM566169BC | |
| Descripción | 1M x 16 Pseudo SRAM | |
| Fabricantes | Etron Technology | |
| Logotipo |  |
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EtronTechwww.DataSheet4U.com
EM566169BC
1M x 16 Pseudo SRAM
Rev 0.6 Apr. 2004
Features
Pad Assignment
• Organized as 1M words by 16 bits
• Fast Cycle Time : 60/65/70/85ns
• Fast Page Cycle Time : 18/20/25/30ns
• Page Read Operation by 8 words
• Standby Current(ISB1): 100uA
• Deep power-down Current : 10uA (Memory cell data
invalid)
• Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
• Compatible with low power SRAM
• Single Power Supply Voltage : 3.0V±0.3V
• Package Type : 48-ball FBGA, 6x8mm
12
A LB# OE#
B DQ8 UB#
C DQ9 DQ10
D VSS DQ11
3
A0
A3
A5
A17
456
A1 A2 CE2
A4 CE1# DQ0
A6 DQ1 DQ2
A7 DQ3 VCC
Ordering Information
Part Number
Speed(ns)
EM566169BC-60/65/70/85
60/65/70/85
Pin Description
Symbol
A0 – A19
DQ0 – DQ15
CE1#
CE2
OE#
W E#
LB#
UB#
VCC/VCCQ
VSS/VSSQ
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Standby Mode
Output Enable
Write Control
Lower Byte Control
Upper Byte Control
Power Supply
Ground
E VCC DQ12 NC A16 DQ4 VSS
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 A19 A12 A13 WE# DQ7
H
A18 A8
A9 A10 A11 NC
Overview
The EM566169 is a 16M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced
CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration.
This device operates from a single power supply. Advanced circuit technology provides both high speed and
low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or
CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the device, and output
enable (OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte
access. This device is well suited to various microprocessor system applications where high speed, low power
and battery backup are required. And, with a guaranteed wide operating range, the EM566169 can be used in
environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
1 page  
EtronTechwww.DataSheet4U.com
EM566169BC
DC Characteristics
Symbol Parameter
Test Conditions
ILI
Input Leakage
Current
Output Leakage
ILO Current
VIN = VSS to VCC
VIO = VSS to VCC
CE1# = VIH, CE2 = VIL or
OE# = VIH or WE# = VIL
ICC1
Operating Current
@ Min Cycle Time
Cycle time = Min., 100% duty,
IIO = 0mA, CE1# = VIL, CE2 =
VIH, VIN = VIH or VIL
70ns/85ns
60ns/65ns
Min.
-1
Max.
1
Unit
µA
-1 1
35
−
45
µA
mA
ISB1
ISBD
VOL
Standby Current
(CMOS)
Deep Power Down
(0Mb refresh)
Output Low
Voltage
CE1# = VCC – 0.2V and
CE2 = VCC – 0.2V,
Other inputs = VSS ~ VCC
CE1# ≤ 0.2V and CE2 ≤ 0.2V, Other inputs =
VSS ~ VCC
IOL = 2.1mA
Output High
VOH Voltage
IOH = -1.0mA
−
−
−
2.4
100
10
0.4
−
µA
µA
V
V
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input capacitance
Output capacitance
CIN
COUT
−
−
− 8 pF
− 10 pF
VIN = GND
VOUT = GND
Notes: These parameters are sampled and not 100% tested.
5
Rev 0.6
Apr. 2004
5 Page 
EtronTechwww.DataSheet4U.com
Write Cycle 1 – WE# Controlled1) 2)
Address
CE1#
tWC
tAW
tCW
EM566169BC
tWR
UB#, LB#
tBW
WE#
Data In
Data Out
High-Z
tAS
Data Undefined
tWP
tDW
tDH
tWHZ
Data Valid
tOW
High-Z
Write Cycle 2 – CE1# Controlled1) 2)
Address
CE1#
tAS
tWC
tAW
tCW
tWR
UB#, LB#
WE#
Data In
Data Out
High-Z
tBW
tWP
tDW
tDH
Data Valid
11
Rev 0.6
Apr. 2004
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet EM566169BC.PDF ] | |
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