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Numéro de référence | 2N7002E | ||
Description | N-channel TrenchMOS FET | ||
Fabricant | NXP Semiconductors | ||
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1 Page
2N7002E
N-channel TrenchMOS™ FET
Rev. 02 — 26 April 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Logic level threshold compatible
s Surface-mounted package
s Very fast switching
s TrenchMOS™ technology
1.3 Applications
s Logic level translator
s High speed line driver
1.4 Quick reference data
s VDS ≤ 60 V
s RDSon ≤ 3 Ω
s ID ≤ 385 mA
s Ptot = 0.83 W
2. Pinning information
Table 1: Pinning
Pin Description
1 gate (G)
2 source (S)
3 drain (D)
Simplified outline
3
12
SOT23
Symbol
D
G
mbb076 S
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Pages | Pages 11 | ||
Télécharger | [ 2N7002E ] |
No | Description détaillée | Fabricant |
2N7002 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Pan Jit International Inc. |
2N7002 | N-channel Trench MOSFET | NXP Semiconductors |
2N7002 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
2N7002 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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