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2N7002E fiches techniques PDF

NXP Semiconductors - N-channel TrenchMOS FET

Numéro de référence 2N7002E
Description N-channel TrenchMOS FET
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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2N7002E fiche technique
2N7002E
N-channel TrenchMOS™ FET
Rev. 02 — 26 April 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Logic level threshold compatible
s Surface-mounted package
s Very fast switching
s TrenchMOS™ technology
1.3 Applications
s Logic level translator
s High speed line driver
1.4 Quick reference data
s VDS 60 V
s RDSon 3
s ID 385 mA
s Ptot = 0.83 W
2. Pinning information
Table 1: Pinning
Pin Description
1 gate (G)
2 source (S)
3 drain (D)
Simplified outline
3
12
SOT23
Symbol
D
G
mbb076 S

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