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2N7002E fiches techniques PDF

Diodes Incorporated - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Numéro de référence 2N7002E
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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2N7002E fiche technique
SPICE MODEL: 2N7002E
2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance: RDS(ON)
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Lead Free/RoHS Compliant (Note 2)
Mechanical Data
· Case: SOT-23
· Case Material: UL Flammability Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed
· over Alloy 42 leadframe).
· Terminal Connections: See Diagram
· Marking (See Page 2): K7B
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
A
D
BC
G TOP VIEW S
ED
G
H
K
J
L
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
a 0° 8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed
Continuous
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
Value
60
60
±20
±40
240
300
417
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Units
V
V
V
mA
mW
°C/W
°C
DS30376 Rev. 5 - 2
1 of 4
www.diodes.com
2N7002E
ã Diodes Incorporated

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