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Número de pieza | PA2423U | |
Descripción | 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary | |
Fabricantes | SiGe Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PA2423U (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! PA2423U
RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC
Preliminary
Applications
Bluetoothtm wireless technology (Class 1)
USB dongles
PCMCIA, flash cards
Access points
2.4 GHz cordless telephone
Features
+22.5 dBm Output Power
Low current 108 mA typical @ POUT = +20 dBm
CMOS Enable Interface
Power-control and power-down modes
3.3 V single supply operation
Thin, lead-free 6 pin QFN package
Ordering Information
Part Number
PA2423U
PA2423U-R
PA2423U-EV1
Package
6 pin QFN
(0.5 mm height)
6 pin QFN
(0.5 mm height)
Evaluation Kit
Remark
Samples
Tape &
Reel
Product Description
A monolithic, high-efficiency, silicon-germanium power
amplifier IC, the PA2423U is designed for 2.4 GHz
wireless applications, including BluetoothTM Class1 and
2.4 GHz cordless telephone applications. It delivers
+22.5 dBm output power making it capable of
overcoming insertion losses of up to 2.5 dB between
amplifier output and antenna input.
The PA2423U provides a digital control input for
controlling power up and power down modes of
operation.
The PA2423U operates at 3.3 V DC. At typical output
power level (+22.5 dBm), the current consumption is
135 mA.
The silicon/silicon-germanium structure of the
PA2423U, and its exposed die-pad package, soldered
to the system PCB, provide high thermal conductivity
and a subsequently low junction temperature. This
device is capable of operating at a duty cycle of 100
percent. The device is pin for pin compatible to the
PA2423L.
Functional Block Diagram
IN Stage 1
V CT L
Bias Generator
V CC0
V R A MP
Control
Circuitry
Interstage
Match
Stage 2
OUT/V C C 2
GND
V CC1
GND
Figure 1: PA2423U Block Diagram
131-DST-01 Rev 1.1 Apr-18-2006
Confidential
QA041806
1 of 10
1 page PA2423U
RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC
Preliminary
Typical Performance Characteristics
Test Conditions: SiGe PA2423U-EV1: VCC0 = VCC1 = VCC2 = VRAMP = VCTL = 3.3 V, PIN = 0 dBm, TA = 25 °C, f = 2.45
GHz, input and output externally matched to 50Ω unless otherwise noted
POUT vs. PIN over VCC (2.45 GHz)
3.3 V
2.7 V
3.6 V
30
25
20
15
10
5
0
-24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
PIN (dBm)
ICC vs. PIN over VCC (2.45 GHz)
3.3 V
2.7 V
3.6 V
0.17
0.15
0.13
0.11
0.09
0.07
0.05
-24 -22 -20 -18 -16 -14 -12 -10 -8
-6 -4 -2
0
2
PIN (dBm)
50
45
40
35
30
25
20
15
10
5
0
-30
Efficiency vs PIN over VCC (2.45 GHz)
3.3V
2.7V
3.6V
-25 -20 -15 -10
-5
PIN (dBm)
0
5
10
Gain vs Frequency over VCC (PIN = 0 dBm)
3.3 V
2.7 V
3.6 V
23.5
23
22.5
22
21.5
21
20.5
20
2.4
2.41 2.42 2.43 2.44 2.45 2.46 2.47 2.48 2.49
Frequency (GHz)
2.5
30
25
20
15
10
5
0
-5
-10
-15
-20
0
POUT vs. VCTL over VCC (2.45 GHz)
3.3 V
2.7 V
3.6 V
0.5 1 1.5 2 2.5 3 3.5 4
VCTL (V)
I CC vs. VCTL over VCC (2.45 GHz)
3.3 V
2.7 V
3.6 V
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5
VCTL (V)
Figure 3: PA2423U Typical Performance Characteristics
131-DST-01 Rev 1.1 Apr-18-2006
Confidential
QA041806
5 of 10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PA2423U.PDF ] |
Número de pieza | Descripción | Fabricantes |
PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information | SiGe Semiconductor Inc. |
PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | SiGe Semiconductor Inc. |
PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | SiGe Semiconductor Inc. |
PA2423G | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | SiGe Semiconductor Inc. |
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