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Numéro de référence | HI772 | ||
Description | PNP EPITAXIAL PLANAR TRANSISTOR | ||
Fabricant | Hi-Sincerity | ||
Logo | |||
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9015
Issued Date : 1996.04.12
Revised Date : 2002.05.08
Page No. : 1/4
HI772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI772 is designed for using in output stage of 10 W audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................. -7 A
IB Base Current (DC) .................................................................................................... -600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Classification Of hFE1
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
100-200
P
160-320
E
250-500
HI772
HSMC Product Specification
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Pages | Pages 4 | ||
Télécharger | [ HI772 ] |
No | Description détaillée | Fabricant |
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