DataSheetWiki


HI772 fiches techniques PDF

Hi-Sincerity - PNP EPITAXIAL PLANAR TRANSISTOR

Numéro de référence HI772
Description PNP EPITAXIAL PLANAR TRANSISTOR
Fabricant Hi-Sincerity 
Logo Hi-Sincerity 





1 Page

No Preview Available !





HI772 fiche technique
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9015
Issued Date : 1996.04.12
Revised Date : 2002.05.08
Page No. : 1/4
HI772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI772 is designed for using in output stage of 10 W audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-251
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................. -7 A
IB Base Current (DC) .................................................................................................... -600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Classification Of hFE1
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Rank
Range
Q
100-200
P
160-320
E
250-500
HI772
HSMC Product Specification

PagesPages 4
Télécharger [ HI772 ]


Fiche technique recommandé

No Description détaillée Fabricant
HI772 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity
Hi-Sincerity

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche