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PDF 2N718A Data sheet ( Hoja de datos )
| Número de pieza | 2N718A | |
| Descripción | NPN LOW POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
2N718A
2N1613
2N1613L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
2N718A
2N1613, L
2N718A
2N1613, L
VCEO
VCBO
VEBO
IC
PT
30 Vdc
75 Vdc
7.0 Vdc TO-18 (TO-206AA)*
500 mAdc 2N718A
0.5
0.8 W
1.8
3.0
Operating & Storage Junction Temperature Range
TJ, Tstg
-55 to +175 0C
TO-39 (TO-205AD)*
THERMAL CHARACTERISTICS
2N1613
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
2N718A
RθJC
97 0C/W
2N1613, L
58
1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C
2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C
TO-5*
2N1613L
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
*See appendix A for package
outline
Min. Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Emitter Breakdown Voltage
V(BR)CEO
30
Vdc
IC = 10 mAdc, RBE = 10 Ω
Collector-Base Cutoff Current
V(BR)CER
50
Vdc
VCB= 60 Vdc
Emitter-Base Cutoff Current
ICBO 10 ηAdc
VEB = 5.0 Vdc
IEBO 10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N718A.PDF ] | |
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