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PDF HMC590 Data sheet ( Hoja de datos )
| Número de pieza | HMC590 | |
| Descripción | high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi | |
| Fabricantes | Hittite Microwave Corporation | |
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Hay una vista previa y un enlace de descarga de HMC590 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v01.0107
HMC590
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Typical Applications
Features
The HMC590 is ideal for use as a power amplifier for:
Saturated Output Power: +31.5 dBm @ 25% PAE
• Point-to-Point Radios
Output IP3: +41 dBm
• Point-to-Multi-Point Radios
Gain: 24 dB
• Test Equipment & Sensors
DC Supply: +7.0 V @ 820 mA
• Military End-Use
50 Ohm Matched Input/Output
• Space
Die Size: 2.47 mm x 1.33 mm x 0.1 mm
Functional Diagram
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General Description
The HMC590 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Amplifier which operates from 6
to 10 GHz. This amplifier die provides 24 dB of gain,
+31.5 dBm of saturated power at 25% PAE from a +7.0V
supply. The RF I/Os are DC blocked and matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All data is taken with the chip in a 50 ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of length 0.31mm (12 mils). For applications
which require optimum OIP3, Idd should be set for 520
mA, to yield +41 dBm OIP3. For applications which
require optimum output P1dB, Idd should be set for
820 mA, to yield up to +32 dBm Output P1dB.
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 820 mA[1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Frequency Range
6 - 10
6.8 - 9
Gain
21 24
22 25
Gain Variation Over Temperature
0.05
0.07
0.05
Input Return Loss
10 10
Output Return Loss
10 10
Output Power for 1 dB
Compression (P1dB)
27 30
28.5
31.5
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
31.5 32
41 41
Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm
820
820
Max.
0.07
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
1 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v01.0107
1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +7.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 67 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+8 Vdc
-2.0 to 0 Vdc
+12 dBm
175 °C
6.0 W
14.9 °C/W
-65 to +150 °C
-55 to +85 °C
HMC590
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
824
+7.0
820
+7.5
815
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
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1 - 218
Die Packaging Information [1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC590.PDF ] | |
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