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NJ30L fiches techniques PDF

InterFET - Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

Numéro de référence NJ30L
Description Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier
Fabricant InterFET 
Logo InterFET 





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NJ30L fiche technique
F-16
NJ30L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ30L Process.
Datasheet
2N5911, 2N5912
IFN5911, IFN5912
SMP5911
SMP5912
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ30L Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 25 – 30
V IG = – 1 µA, VDS = ØV
IGSS – 10 – 100 pA VGS = – 15V, VDS = ØV
IDSS 2
40 mA VDS = 15V, VGS = ØV
VGS(OFF) – 0.5
– 6 V VDS = 15V, ID = 1 nA
gfs
8
mS VDS = 15V, VGS = ØV
f = 1 kHz
Ciss
5
pF VDS = 15V, VGS = ØV
f = 1 MHz
Crss
1.5
pF VDS = 15V, VGS = ØV
f = 1 MHz
N 2.5 nV/HZ VDS = 10V, ID = 5 mA f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com

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