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PDF NJ32 Data sheet ( Hoja de datos )
| Número de pieza | NJ32 | |
| Descripción | Silicon Junction Field-Effect Transistor General Purpose Amplifier | |
| Fabricantes | InterFET | |
| Logotipo |  |
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F-18
NJ32 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ32 Process.
Datasheet
2N3821, 2N3822
2N3823, 2N3824
2N4222, 2N4222A
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.018" X 0.018"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ32 Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 25 – 50
V IG = – 1 µA, VDS = ØV
IGSS – 10 – 100 pA VGS = – 15V, VDS = ØV
IDSS 1
22 mA VDS = 15V, VGS = ØV
VGS(OFF) – 0.5
– 6 V VDS = 15V, ID = 1 nA
gfs
4
mS VDS = 15V, VGS = ØV
f = 1 kHz
Ciss
6 7.0 pF VDS = 15V, VGS = ØV
f = 1 MHz
Crss
1.3 3 pF VDS = 15V, VGS = ØV
f = 1 MHz
e¯N
7
nV/√HZ VDS = 10V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NJ32.PDF ] | |
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