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PDF NJ26L Data sheet ( Hoja de datos )
| Número de pieza | NJ26L | |
| Descripción | Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier | |
| Fabricantes | InterFET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NJ26L (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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F-12
NJ26L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ26L Process.
Datasheet
2N5397, 2N5398
J210, J211, J212
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
www.DataSheet4U.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ26L Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 25 – 30
V IG = – 1 µA, VDS = ØV
IGSS – 10 – 100 pA VGS = – 15V, VDS = ØV
IDSS 2
40 mA VDS = 15V, VGS = ØV
VGS(OFF) – 0.5
– 6 V VDS = 15V, ID = 1 nA
gfs
8
mS VDS = 15V, VGS = ØV
f = 1 kHz
Ciss
5
pF VDS = 15V, VGS = ØV
f = 1 MHz
Crss
1.5
pF VDS = 15V, VGS = ØV
f = 1 MHz
e¯N 2.5 nV/√HZ VDS = 15V, ID = 5 mA f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ26L.PDF ] | |
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